(Ca,Sr)(Zr,Ti)O_3系抗还原高频介质瓷料的研究

采用固相合成法制备了(Ca,Sr)(Zr,Ti)O3(简称CSZT)系电容器陶瓷材料,研究了主晶相组分对所制材料介电性能的影响。结果表明:通过调整主晶相CSZT中各组分的配比,再加入适量的烧结助剂,能得到一种可在还原气氛中烧结的高频介质瓷料,该瓷料可与镍内电极共烧,其相对介电常数约为89,介质损耗(tanδ)小于5×10–4,绝缘电阻达到1012Ω,介电常数温度系数为–1 037×10–6/℃。     

钛酸锌镁介质陶瓷的制备与介电性能

采用固相合成法制备了Mg0.22Zn0.78TiO3(简称MZT)化合物陶瓷粉体,研究了烧结助剂及Ca O掺杂对MZT介质陶瓷的烧结和介电性能的影响。实验结果表明,掺杂少量的Ca O能改善MZT陶瓷的介电性能,加入质量分数为10%烧结助剂,能获得一种能在较低温度下烧结的MZT系瓷料,烧结温度为1 000℃时,测得陶瓷样品的最佳介电性能:相对介电常数约为21,介质损耗小于1.5×10-4,介电常数温度系数符合C0G瓷料的要求。     

应用于无线传感网络的低功耗10bit 300Ksps多通道逐次逼近型模数转换器的设计

本文给出了一款可应用于无线传感网络的低功耗10bit 300Ksps的逐次逼近型模数转换器(SAR ADC)的设计。采用了单端结构低功耗的拆分式电容阵列DAC和具有轨到轨输入级的比较器来实现本文中的ADC,可以减小功耗同时扩展满量程输入范围。为了实现功耗优化,采用2V的低电源电源供电。设计的ADC还具有4个模拟信号通道,使其更适用于无线传感网络的应用。电路样片采用3.3V 0.35μm 2P4M CMOS工艺实现,占用了1.23mm2的芯片面积,测试结果表明在2V供电166Ksps的采样速率下,ADC的功耗只有200uW,计算得到的信噪比为58.25dB,有效位数为9.38bit,品质因子FOM为4.9pJ/conversion-step。     

一种用于逐次逼近ADC的高能效高线性度开关电容时序

提出了一种用于逐次逼近模数转换器的高能效高线性度开关电容时序。相较于典型的基于V_CM的开关原理,该开关时序可减少37%的开关能量,并具有更高的线性度。该开关时序已应用于1V,10位300kS/s的SAR ADC,并在0.18μm标准CMOS工艺下成功流片。测试结果表明,在1V电源电压下,此SAR ADC的SNDR为55.48dB,SFDR为66.98dB,功耗为2.13μW,品质因数到达14.66fJ/c-s。DNL和INL分别为0.52/-0.47 LSB和0.72/-0.79 LSB,并且与静态非线性模型一致,最大INL出现在 V_FS/4处和3V_FS/4处。     

Temperature dependent interfacial and electrical characteristics during atomic layer deposition and annealing of HfO2 films in p-GaAs metal-oxide-semiconductor capacitors

We have investigated the temperature dependent interfacial and electrical characteristics of p-GaAs metal-oxide-semiconductor capacitors during atomic layer deposition(ALD) and annealing of HfO₂ using the tetrakis(ethylmethyl) amino hafnium precursor. The leakage current decreases with the increase of the ALD temperature and the lowest current is obtained at 300℃ as a result of the Frenkel-Poole conduction induced leakage current being greatly weakened by the reduction of interfacial oxides at the higher temperature. Post deposition annealing(PDA) at 500℃ after ALD at 300℃ leads to the lowest leakage current compared with other annealing temperatures. A pronounced reduction in As oxides during PDA at 500℃ has been observed using X-ray photoelectron spectroscopy at the interface resulting in a proportional increase in Ga₂O₃. The increment of Ga₂O₃ after PDA depends on the amount of residual As oxides after ALD. Thus, the ALD temperature plays an important role in determining the high-k/GaAs interface condition. Meanwhile, an optimum PDA temperature is essential for obtaining good dielectric properties.     

超级电容电池容量自动检测系统的研究

超级电容电池又叫双电层电容器,是一种新型储能装置,目前国内外对于超级电容电池容量的检测系统自动化程度不高,多数工作由人工控制完成。本文总结了相关蓄电池的自动检测系统,在此基础上提出了适合于超级电容电池的自动检测装置,并通过此装置检测出超级电容电池的常温容量,低温容量以及高倍率放电能力,为今后超级电容电池的自动化检测提供一套可行方案。     

高精度流水线模数转换器的全定制版图设计

采用0.18μm混合信号1P6M CMOS工艺,介绍了一种高精度流水线模数转换器的全定制版图设计。该芯片为数模混合信号IC,工作电压1.8 V/3.3 V,具有12位的采样精度和25 MHz的工作频率。版图设计过程中使用了合适的版图布局和电源、地线网络结构,重点介绍了采样保持模块设计上的一些结构和技巧。芯片测试结果表明芯片功能全部实现、性能良好,版图设计较好地实现了电路功能。     

活性炭孔分布对其电容衰减性能的影响

以8种不同孔结构的活性炭为实验对象,利用低温N2(77 K)吸附法测定活性炭的比表面积和孔径分布,并将其涂布到铝箔集流体上组装成双电层超级电容器。以1 mol/L四氟硼酸四乙基铵的乙腈溶液(Et4NBF4/AN)为电解液,利用循环伏安和恒流充放电技术研究活性炭的比表面积、中孔和微孔分布以及孔容等对双电层电容器倍率衰减性能的影响。结果表明:活性炭的比表面积、孔径和孔容的适量增大均能提高活性炭的比容量;中孔的适量增加不仅可以减小超级电容器的电阻,还可以提高活性炭的大电流充放电性能,降低大电流充放电时的电容衰减。当电流密度从0.15 A/g增大到9.6 A/g时:中孔活性炭的比电容衰减率平均为14.13%,而微孔活性炭的平均衰减率为20.58%;中孔表面积对比电容的贡献由10.10μF/cm2下降至9.95μF/cm2,而微孔表面积的贡献则由5.68μF/cm2下降至4.21μF/cm2。     

一种用于声呐发射机的超级电容被动均压简易实用电路

超级电容器的性能不一致性会造成处于串联模式的电容组中个别电容器首先发生过压失效,进而加速整个储能组的失效。现有的均压电路一般工作在线性状态,电路也较复杂,不便于调试和生产。介绍了一种仅由5个元器件组成的简易、实用、高效的开关型被动均压电路,分析了其工作原理及均压特性。该电路在声呐发射机的储能电源中可长期使用,很好地保护了超级电容组。     

Encapsulation of MnS Nanocrystals into N,S-Co-doped Carbon as Anode Material for Full Cell Sodium-Ion Capacitors

Sodium-ion capacitors(SICs)have received increasing interest for grid stationary energy storage application due to their affordability,high power,and energy densities.The major challenge for SICs is to overcome the kinetics imbalance between faradaic anode and nonfaradaic cathode.To boost the Na+reaction kinetics,the present work demonstrated a high-rate MnS-based anode by embedding the MnS nanocrystals into the N,S-co-doped carbon matrix(MnS@NSC).Benefiting from the fast pseudocapacitive Na+storage behavior,the resulting composite exhibits extraordinary rate capability(205.6 mAh g−1 at 10 A g−1)and outstanding cycling stability without notable degradation after 2000 cycles.A prototype SIC was demonstrated using MnS@NSC anode and N-doped porous carbon(NC)cathode;the obtained hybrid SIC device can display a high energy density of 139.8 Wh kg−1 and high power density of 11,500 W kg−1,as well as excellent cyclability with 84.5%capacitance retention after 3000 cycles.The superior electrochemical performance is contributed to downsizing of MnS and encapsulation of conductive N,S-co-doped carbon matrix,which not only promote the Na+and electrons transport,but also buffer the volume variations and maintain the structure integrity during Na+insertion/extraction,enabling its comparable fast reaction kinetics and cyclability with NC cathode.